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IXGN60N60C2 PDF DatasheetThe IXGN60N60C2 is IGBT, Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | IXGN60N60C2 | IGBT, Insulated Gate Bipolar Transistor HiPerFASTTM IGBTs with Diode
IXGN60N60C2 IXGN60N60C2D1
C2-Class High Speed IGBTs
VCES =
IC110 =
VCE(sat) trr
≤ =
600V
60A
2.5V 35ns
Symbol
VCES VCGR
VGES VGEM IC25 IC110 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ
|
IXYS Corporation |
| 2 | IXGN60N60C2D1 | IGBT, Insulated Gate Bipolar Transistor HiPerFASTTM IGBTs with Diode
IXGN60N60C2 IXGN60N60C2D1
C2-Class High Speed IGBTs
VCES =
IC110 =
VCE(sat) trr
≤ =
600V
60A
2.5V 35ns
Symbol
VCES VCGR
VGES VGEM IC25 IC110 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ
|
IXYS Corporation |
|
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