IXGH60N50 PDF Datasheet

The IXGH60N50 is (IXGH60N50 / IXGH60N60) HIGH CURRENT MOSIGBT. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXGH60N50	(IXGH60N50 / IXGH60N60) HIGH CURRENT MOSIGBT	IXYS Corporation

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Relevant Search Results

Part No	Description	Manufacturers	PDF
IXGH60N60	(IXGH60N50 / IXGH60N60) HIGH CURRENT MOSIGBT	IXYS Corporation
IXGH60N60B2	IGBT, Insulated Gate Bipolar Transistor Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 kH- hard switching and up to 100 KH- resonant switching IXGH 60N60B2 IXGT 60N60B2 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A < 1.8 V = 100 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ =	IXYS Corporation
IXGH60N60C2	HiPerFASTTM IGBT C2-Class High Speed IGBTs Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 60N60C2 IXGT 60N60C2 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 2.5 V = 35 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ	IXYS Corporation
IXGH85N30C3	GenX3 300V IGBT	IXYS
IXGH72N60C3	GenX3 600V IGBT	IXYS Corporation
IXGH72N60B3	GenX3 B3-Class IGBTs	IXYS Corporation
IXGH72N60A3	GenX3 600V IGBT	IXYS Corporation

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