IXGH40N60B2D1 PDF Datasheet

The IXGH40N60B2D1 is IGBT, Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXGH40N60B2D1	IGBT, Insulated Gate Bipolar Transistor HiPerFASTTM IGBT Optimized for 10-25 KH- hard switching and up to 150 KH- resonant switching Preliminary Data Sheet IXGH 40N60B2D1 IXGT 40N60B2D1 V CES IC25 VCE(sat) t fi typ = 600 V = 75 A < 1.7 V = 82 ns Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M�	IXYS

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Relevant Search Results

Part No	Description	Manufacturers	PDF
IXGH40N60A	High speed IGBT Low VCE(sat) IGBT High speed IGBT IXGH, IXGM 40 N60 IXGH, IXGM 40 N60A VCES 600 V 600 V IC25 75 A 75 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions VCES V CGR VGES V GEM IC25 IC90 I CM SSOA (RBSOA) P C TJ TJM T stg Md Weight TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ	IXYS Corporation
IXGH40N30A	HiPerFAST IGBT	IXYS Corporation
IXGH40N30B	HiPerFAST IGBT	IXYS Corporation
IXGH85N30C3	GenX3 300V IGBT	IXYS
IXGH72N60C3	GenX3 600V IGBT	IXYS Corporation
IXGH72N60B3	GenX3 B3-Class IGBTs	IXYS Corporation
IXGH72N60A3	GenX3 600V IGBT	IXYS Corporation

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