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IXGH30N60B2 PDF DatasheetThe IXGH30N60B2 is (IXGH30N60B2 / IXGT30N60B2) HiPerFAST IGBT. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | IXGH30N60B2 | (IXGH30N60B2 / IXGT30N60B2) HiPerFAST IGBT
Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KH- hard switching and up to 150 KH- resonant switching
IXGH 30N60B2 IXGT 30N60B2
VCES IC25 VCE(sat) tfi typ
= 600 V = 70 A < 1.8 V = 82 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 2
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 IXYS Corporation |
| 2 | IXGH30N60B2D1 | IGBT, Insulated Gate Bipolar Transistor Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KH- hard switching and up to 150 KH- resonant switching
IXGH 30N60B2D1 IXGT 30N60B2D1
VCES IC25 VCE(sat) tfi typ
= 600 V = 70 A < 1.8 V = 82 ns
Symbol
Test Conditions
VCES VCGR
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ
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 IXYS |
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