IXFK90N30 PDF Datasheet

The IXFK90N30 is HiPerFET Power MOSFETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXFK90N30	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 90N30 IXFK 90N30 VDSS ID25 RDS(on) = 300 V = 90 A = 33 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous	IXYS Corporation

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Part No	Description	Manufacturers	PDF
IXFK90N20Q	HiPerFETTM Power MOSFETs Q-CLASS Advanced Technical Information HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV, dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 P	IXYS Corporation
IXFK90N20	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv, dt, Low trr Symbol Test Conditions VDSS IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS(on) 23 mW 23 mW 20 mW 200 V 90 A 200 V 100 A 200 V 106 A trr 200 ns TO-264 AA TO-264 AA (IXFK) Maximum Ratings IXFK IXFN IXF	IXYS Corporation
IXFK94N50P2	Power MOSFET, Transistor Polar2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK94N50P2 IXFX94N50P2 VDSS = ID25 = RDS(on) ≤ 500V 94A 55mΩ TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV, dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 1	IXYS Corporation
IXFK94N50P2	Power MOSFET, Transistor	IXYS Corporation
IXFK90N60X	Power MOSFET, Transistor	IXYS
IXFK90N20Q	HiPerFETTM Power MOSFETs Q-CLASS	IXYS Corporation
IXFK90N20	HiPerFET Power MOSFETs	IXYS Corporation

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