IXFK102N30P PDF Datasheet

The IXFK102N30P is Polar MOSFETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXFK102N30P	Polar MOSFETs Advanced Technical Information PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS ID25 RDS(on) trr = = = ≤ 300 V 102 A 33 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test Co	IXYS Corporation

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Part No	Description	Manufacturers	PDF
IXFK100N10	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv, dt, Low trr VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW 100 V 100 A 100 V 150 A trr 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 ID120 IDM IAR EAR dv, dt PD TJ TJM Tstg TL VISOL Md Weight Test Cond	IXYS Corporation
IXFK100N25	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 100N25 IXFK 100N25 VDSS ID25 RDS(on) = 250 V = 100 A = 27 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuo	IXYS Corporation
IXFK120N20	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFX 120N20 IXFK 120N20 VDSS ID25 RDS(on) = 200 V = 120 A = 17 mW trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS	IXYS Corporation
IXFK94N50P2	Power MOSFET, Transistor	IXYS Corporation
IXFK90N60X	Power MOSFET, Transistor	IXYS
IXFK90N30	HiPerFET Power MOSFETs	IXYS Corporation
IXFK90N20Q	HiPerFETTM Power MOSFETs Q-CLASS	IXYS Corporation

List of most widely used semiconductors

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