IXFA130N10T2 PDF Datasheet

The IXFA130N10T2 is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXFA130N10T2	Power MOSFET, Transistor Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier IXFA130N10T2 IXFP130N10T2 VDSS ID25 RDS(on) = 100V = 130A ≤ 9.1mΩ TO-263 AA (IXFA) G S Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV, dt PD TJ TJM Tstg	IXYS Corporation

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Relevant Search Results

Part No	Description	Manufacturers	PDF
IXFA12N50P	Polar MOSFETs Advance Technical Information IXFA 12N50P IXFP 12N50P PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA 12N50P IXFP 12N50P VDSS ID25 RDS(on) trr = 500 = 12 ≤ 0.5 ≤ 200 V A Ω ns Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test	IXYS Corporation
IXFA10N60P	Polar MOSFETs Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 10N60P IXFP 10N60P VDSS = 600 V ID25 = 10 A RDS(on) ≤ 740 mΩ ≤ 250 ns trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Test Condit	IXYS Corporation
IXFA16N50P	Polar MOSFETs Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 RDS(on) trr = 500 V = 16 A = 400 mΩ = 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C T	IXYS Corporation
IXFA8N65X2	Power MOSFET, Transistor	IXYS
IXFA7N80P	Power MOSFET, Transistor	IXYS Corporation
IXFA7N100P	Power MOSFET, Transistor	IXYS Corporation
IXFA76N15T2	Power MOSFET, Transistor	IXYS Corporation

List of most widely used semiconductors

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