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Datasheet IW4029B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IW4029B | Binary or BCD-Decade Counter TECHNICAL DATA
IW4029B
Presettable Up/Down Counter
High-Voltage Silicon-Gate CMOS
The IW4029B consists of a four-stage binary or BCD-decade up/down counter with provisions for look-ahead carry in both counting modes. The inputs consists of a single CLOCK, CARRY IN,(CLOCK ENABLE), BINARY/DECADE, UP |  IK Semiconductor | data |
IW4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IW4001B | Quad 2-Input NOR Gate TECHNICAL DATA
IW4001B
Quad 2-Input NOR Gate High-Voltage Silicon-Gate CMOS
The IW4001B NOR gates provide the system designer with direct emplementation of the NOR function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full package-temperature range; 100 IK Semiconductor gate | | |
| 2 | IW4002B | Dual 4-Input NOR Gate TECHNICAL DATA
IW4002B
Dual 4-Input NOR Gate
High-Voltage Silicon-Gate CMOS
The IW4002B NOR gates provide the system designer with direct emplementation of the NOR function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full package-temperature range; 100 IK Semiconductor gate | | |
| 3 | IW4006B | 18-Bit Static Shift Register TECHNICAL DATA
IW4006B СMOS 18-Stage Static Shift Register
The RCA-4006B types are composed of 4 separate shift register sections: two sections of four stages and two sections of five stages with an output tar at the fourth stage. Each section has an independent single-rail data path. • • • IK Semiconductor register | | |
| 4 | IW4011B | Quad 2-Input NAND Gate TECHNICAL DATA
IW4011B
Quad 2-Input NAND Gate
High-Voltage Silicon-Gate CMOS
The IW4011B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full package-temperature range; IK Semiconductor gate | | |
| 5 | IW4012B | Dual 4-Input NAND Gate TECHNICAL DATA
IW4012B
Dual 4-Input NAND Gate
High-Voltage Silicon-Gate CMOS
The IW4012B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full package-temperature range; IK Semiconductor gate | | |
| 6 | IW4013B | Dual D Flip-Flop High-Voltage Silicon-Gate CMOS TECHNICAL DATA
IW4013B
Dual D Flip-Flop
High-Voltage Silicon-Gate CMOS
The IW4013B consists of two identical, independent data-type flipflops. Each flip-flop has independent data, set, reset, and clock inputs and Q and Q outputs. These devices can be used for shift register applications, and, by c  ETC gate | | |
| 7 | IW4013B | Dual D-Type Flip-Flop TECHNICAL DATA
IW4013B Dual D Flip-Flop
The IW4013B consists of two identical, independent data-type flipflops. Each flip-flop has independent data, set, reset, and clock inputs and Q and Q outputs. These devices can be used for shift register applications, and, by connecting Q output to the data i IK Semiconductor flip-flop | |
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