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IRLZ34N PDF Datasheet

The IRLZ34N is 55V Single N-channel HexFET Power MOSFET in a TO-220AB Package. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 IRLZ34N 55V Single N-channel HexFET Power MOSFET in a TO-220AB Package

PD - 9.1307B IRLZ34N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V G S RDS(on) = 0.035Ω ID = 30A Description Fifth Generation HEXFETs from Internation
International Rectifier
International Rectifier
2 N-channel Enhancement Mode Logic Level Trenchmos (tm) Transistor

Philips Semiconductors Product specification N-channel enhancement mode Logic level TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistanc
NXP Semiconductors
NXP Semiconductors
3 IRLZ34NL 55V Single N-channel HexFET Power MOSFET in a TO-262 Package

PD - 91308A IRLZ34NS, L l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.035Ω G ID = 30A
International Rectifier
International Rectifier
4 IRLZ34NLPBF (IRLZ34NSPBF / IRLZ34NLPBF) Power MOSFET

l l Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET D IRLZ34NSPbF IRLZ34NLPbF ® VDSS = 55V RDS(on) = 0.035Ω
International Rectifier
International Rectifier




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Part NoDescriptionManufacturersPDF
IRLZ34NS HEXFET Power MOSFET

Previous Datasheet Index Next Data Sheet PD - 9.1308A PRELIMINARY IRLZ34NS HEXFET® Power MOSFET D Logic-Level Gate Drive Advanced Process Technology l Surface Mount l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l VDSS = 55V G S
International Rectifier
International Rectifier
datasheet IRLZ34NS pdf
IRLZ34NL 55V Single N-channel HexFET Power MOSFET in a TO-262 Package

PD - 91308A IRLZ34NS, L l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.035Ω G ID = 30A
International Rectifier
International Rectifier
datasheet IRLZ34NL pdf
IRLZ34NPBF Power MOSFET, Transistor

PD - 94830 l l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D IRLZ34NPbF VDSS = 55V G S RDS(on) = 0.035Ω ID = 30A Description Fifth Generation HEXFETs fr
International Rectifier
International Rectifier
datasheet IRLZ34NPBF pdf
IRLZ44ZSPBF AUTOMOTIVE MOSFETInternational Rectifier
International Rectifier
datasheet IRLZ44ZSPBF pdf
IRLZ44ZS AUTOMOTIVE MOSFETInternational Rectifier
International Rectifier
datasheet IRLZ44ZS pdf
IRLZ44ZPBF AUTOMOTIVE MOSFETInternational Rectifier
International Rectifier
datasheet IRLZ44ZPBF pdf
IRLZ44ZLPBF AUTOMOTIVE MOSFETInternational Rectifier
International Rectifier
datasheet IRLZ44ZLPBF pdf


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