IRGPC20F PDF Datasheet

The IRGPC20F is INSULATED GATE BIPOLAR TRANSISTOR. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IRGPC20F	INSULATED GATE BIPOLAR TRANSISTOR Previous Datasheet Index Next Data Sheet PD - 9.1022 IRGPC20F INSULATED GATE BIPOLAR TRANSISTOR Features Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat	IRF

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Part No	Description	Manufacturers	PDF
IRGPC40M	INSULATED GATE BIPOLAR TRANSISTOR Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1078 IRGPC40M INSULATED GATE BIPOLAR TRANSISTOR Features Short circuit rated - 10 s @ 125°C, V GE = 15V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) G E C Short C	IRF
IRGPC40FD2	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY Previous Datasheet Index Next Data Sheet PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for	IRF
IRGPC40F	INSULATED GATE BIPOLAR TRANSISTOR Previous Datasheet Index Next Data Sheet PD - 9.693A IRGPC40F INSULATED GATE BIPOLAR TRANSISTOR Features Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat	IRF
IRGPS66160DPBF	Insulated Gate Bipolar Transistor	International Rectifier
IRGPS60B120KDP	Insulated Gate Bipolar Transistor	International Rectifier
IRGPS60B120KD	INSULATED GATE BIPOLAR TRANSISTOR	IRF
IRGPS46160DPBF	Insulated Gate Bipolar Transistor	International Rectifier

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