|
|
|
IRGBC30MD2-S PDF DatasheetThe IRGBC30MD2-S is INSULATED GATE BIPOLAR TRANSISTOR. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | IRGBC30MD2-S | INSULATED GATE BIPOLAR TRANSISTOR Previous Datasheet
Index
Next Data Sheet
PD - 9.1143
IRGBC30MD2-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Short circuit rated -10 s @125°C, V GE = 15V Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium
|
International Rectifier |
|
Searching...
Relevant Search Results
Share Link
Sitemap Link
|