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IRG7PH42UD1PBF PDF DatasheetThe IRG7PH42UD1PBF is INSULATED GATE BIPOLAR TRANSISTOR. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | IRG7PH42UD1PbF | INSULATED GATE BIPOLAR TRANSISTOR PD - 97480
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRG7PH42UD1PbF IRG7PH42UD1-EP
VCES = 1200V I NOMINAL = 30A
Features
Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk
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International Rectifier |
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