IRFW730A PDF Datasheet

The IRFW730A is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IRFW730A	Power MOSFET, Transistor )($785(6 Q $YDODQFKH 5XJJHG 7HFKQRORJ\ Q 5XJJHG DWH 2[LGH 7HFKQRORJ\ Q , RZHU ,QSXW &DSDFLWDQFH Q ,PSURYHG DWH &KDUJH Q ([WHQGHG 6DIH 2SHUDWLQJ $UHD Q , RZHU , HDNDJH &XUUHQW P $ 0D[ # 9'6 9 Q , RZHU 5'6 21 æ : 7\S $EVROXWH	Samsung

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Part No	Description	Manufacturers	PDF
IRFW740A	Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 400V Lower RDS(ON): 0.437Ω (Typ.) IRFW, I740A BVDSS = 400 V RDS(on) = 0.55Ω ID =	Fairchild Semiconductor
IRFW740B	400V N-Channel MOSFET IRFW740B , IRFI740B November 2001 IRFW740B , IRFI740B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimiz	Fairchild Semiconductor
IRFW730B	400V N-Channel MOSFET IRFW730B , IRFI730B November 2001 IRFW730B , IRFI730B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimiz	Fairchild Semiconductor
IRFWZ44A	Power MOSFET, Transistor	Samsung
IRFWZ44	Power MOSFET, Transistor	Fairchild Semiconductor
IRFWZ34A	Power MOSFET, Transistor	Fairchild Semiconductor
IRFWZ34	Power MOSFET, Transistor	Fairchild Semiconductor

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