IRFU9310PBF PDF Datasheet

The IRFU9310PBF is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IRFU9310PBF	Power MOSFET, Transistor PD - 95064A P-Channel Surface Mount (IRFR9310) l Straight Lead (IRFU9310) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRFR9310PbF IRFU9310PbF D HEXFET® Power MOSFET VDSS = -400V RDS(on) = 7.0Ω S G ID = -1.8A Third Generation HEXFETs fro	International Rectifier

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Part No	Description	Manufacturers	PDF
IRFU9220	P Channel Power MOSFET IRFR9220, IRFU9220 Data Sheet July 1999 File Number 4015.3 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci c level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silic	Intersil
IRFU9310	Power MOSFET, Transistor PD 9.1663 PRELIMINARY l l l l l l IRFR, U9310 HEXFET® Power MOSFET D P-Channel Surface Mount (IRFR9310) Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -400V G S RDS(on) = 7.0Ω ID = -1.8A Description Third Generation HEXFETs from Internationa	IRF
IRFU9N20D	Power MOSFET, Transistor PD - 93919A SMPS MOSFET Applications High frequency DC-DC converters IRFR9N20D IRFU9N20D HEXFET® Power MOSFET l VDSS 200V RDS(on) max 0.38Ω ID 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (S	IRF
IRFUC20PBF	HEXFET Power MOSFET	International Rectifier
IRFUC20	Power MOSFET, Transistor	Vishay Siliconix
IRFU9N20DPBF	HEXFET Power MOSFET	International Rectifier
IRFU9N20D	Power MOSFET, Transistor	IRF

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