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IRFS740A PDF Datasheet

The IRFS740A is N-Channel MOSFET Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 IRFS740A N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS740A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power suppli
Inchange Semiconductor
Inchange Semiconductor
2 Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 Ω (Typ.) 1 IRFS740A BVDSS = 400 V RDS(on) = 0.55 Ω ID = 5.7 A
Fairchild Semiconductor
Fairchild Semiconductor




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Relevant Search Results

Part NoDescriptionManufacturersPDF
IRFS740B 400V N-Channel MOSFET

IRF740B, IRFS740B November 2001 IRF740B, IRFS740B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-st
Fairchild
Fairchild
datasheet IRFS740B pdf
IRFS730B 400V N-Channel MOSFET

IRF730B, IRFS730B November 2001 IRF730B, IRFS730B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-st
Fairchild
Fairchild
datasheet IRFS730B pdf
IRFS720B 400V N-Channel MOSFET

IRF720B, IRFS720B November 2001 IRF720B, IRFS720B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-st
Fairchild
Fairchild
datasheet IRFS720B pdf
IRFSZ44A Power MOSFET, TransistorSamsung
Samsung
datasheet IRFSZ44A pdf
IRFSZ44 N-Channel Power MOSFET, TransistorSamsung
Samsung
datasheet IRFSZ44 pdf
IRFSZ40 N-Channel Power MOSFET, TransistorSamsung
Samsung
datasheet IRFSZ40 pdf
IRFSZ34A Power MOSFET, TransistorSamsung
Samsung
datasheet IRFSZ34A pdf


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