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IRFS440 PDF DatasheetThe IRFS440 is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | IRFS440 | Power MOSFET, Transistor $GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 500V Lower RDS(ON): 0.638Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EA
|
 Fairchild Semiconductor |
| 2 | IRFS440A | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS440A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area
DESCRIPTION ·Designed for use in switch mode power suppli
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 Inchange Semiconductor |
| 3 | Power MOSFET, Transistor $GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 500V Lower RDS(ON): 0.638Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EA
|
Fairchild Semiconductor |
|
| 4 | IRFS440B | 500V N-Channel MOSFET IRFS440B
November 2001
IRFS440B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr
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 Fairchild |
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