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IRFR320 PDF Datasheet

The IRFR320 is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 IRFR320 Power MOSFET, Transistor

International Rectifier
International Rectifier
2 N-Channel Power MOSFETs

IRFR320, IRFU320 Data Sheet July 1999 File Number 2412.3 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci ed level of energy in the br
Intersil Corporation
Intersil Corporation
3 Power MOSFET, Transistor

www.vishay.com IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 20 3.3 11 Single 1.8 D DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET FEATURES Dynamic dV
Vishay Siliconix
Vishay Siliconix
4 N-Channel Power MOSFETs

IRFR320, IRFU320 Data Sheet July 1999 File Number 2412.3 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci ed level of energy in the br
Fairchild Semiconductor
Fairchild Semiconductor




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Relevant Search Results

Part NoDescriptionManufacturersPDF
IRFR3412 SMPS MOSFET

PD - 94373 SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv, dt Ruggedness l Fully Characterized Capacitance and Avalanc
International Rectifier
International Rectifier
datasheet IRFR3412 pdf
IRFR3411PBF HEXFET Power MOSFET

PD - 95371A l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G IRFR3411PbF IRFU3411PbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 44mΩ Description Advanced HEXFET® Power MOSF
International Rectifier
International Rectifier
datasheet IRFR3411PBF pdf
IRFR3410 Power MOSFET, Transistor

Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current PD - 94505A IRFR3410 IRFU3410 HEXF
International Rectifier
International Rectifier
datasheet IRFR3410 pdf
IRFRU3910 HEXFET Power MOSFETInternational Rectifier
International Rectifier
datasheet IRFRU3910 pdf
IRFRU3707PBF Power MOSFET, TransistorInternational Rectifier
International Rectifier
datasheet IRFRU3707PBF pdf
IRFRC20PBF HEXFET Power MOSFETInternational Rectifier
International Rectifier
datasheet IRFRC20PBF pdf
IRFRC20 Power MOSFET, TransistorVishay Siliconix
Vishay Siliconix
datasheet IRFRC20 pdf


List of most widely used semiconductors


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