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IRFR310 PDF DatasheetThe IRFR310 is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | IRFR310 | Power MOSFET, Transistor $GYDQFHG 3RZHU 026)(7
IRFR310
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 400V Low RDS(ON): 2.815Ω (Typ.)
BVDSS = 400 V RDS(on) = 3.6Ω ID = 1.7 A
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 Fairchild Semiconductor |
| 2 | Power MOSFET, Transistor |
 International Rectifier |
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| 3 | Power MOSFET, Transistor www.vishay.com
IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
400 VGS = 10 V
12 1.9 6.5 Single
3.6
D
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
S N-Channel MOSFET
FEATURES
Dynamic dV,
|
 Vishay Siliconix |
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| 4 | IRFR310A | (IRFR310A / IRFU310A) Advanced Power MOSFET
$GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 400V Low RDS(ON): 2.815Ω (Typ.)
IRFR, U310A
BVDSS = 400 V RDS(on) = 3.6Ω ID = 1.7
|
Fairchild Semiconductor |
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