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IRFR120 PDF DatasheetThe IRFR120 is (IRFR120 / IRFU120) HEXFET POWER MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | IRFR120 | (IRFR120 / IRFU120) HEXFET POWER MOSFET |
International Rectifier |
| 2 | (IRFR120 / IRFU120) N-Channel Power MOSFETs IRFR120, IRFU120
Data Sheet July 1999 File Number
2414.2
8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci ed level of energy in the br
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Intersil Corporation |
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| 3 | Power MOSFET, Transistor www.vishay.com
IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) ( )
100 VGS = 10 V
Qg (Max.) (nC)
16
Qgs (nC) Qgd (nC)
4.4 7.7
Configuration
Single
0.27
D
DPAK (TO-252)
D
IPAK (TO-251)
D
G
S G
GD S
S N-Channel MOSFET
FEATURES Dyn
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Vishay Siliconix |
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| 4 | IRFR1205 | (IRFR1205 / IRFU1205) Power MOSFET PD - 91318B
IRFR, U1205
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance Surface Mount (IRFR1205) Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated
D
VDSS = 55V
G S
RDS(on) = 0.027Ω ID = 44A
Description
Fifth Generation HEXFETs from International Rectifier utilize advance
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International Rectifier |
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