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IRFP9140 PDF DatasheetThe IRFP9140 is P-Channel Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | IRFP9140 | P-Channel Power MOSFET IRFP9140
Data Sheet July 1999 File Number
2292.4
19A, 100V, 0.200 Ohm, P-Channel Power MOSFET
This is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate power
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 INTERSIL |
| 2 | P-Channel Power MOSFETs |
 Samsung Electronics |
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| 3 | Power MOSFET, Transistor Power MOSFET
IRFP9140, SiHFP9140
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
- 100 VGS = - 10 V
61
Qgs (nC)
14
Qgd (nC)
29
Configuration
Single
0.20
S
TO-247AC
G
S
D G
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES Dynamic dV,
|
 Vishay |
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| 4 | IRFP9140N | Power MOSFET, Transistor PD - 9.1492A
PRELIMINARY
l l l l l l
IRFP9140N
HEXFET® Power MOSFET
D
Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated
VDSS = -100V RDS(on) = 0.117Ω
G S
ID = -23A
Description
Fifth Generation HEXFETs from Internat
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 IRF |
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