IRFP2907 PDF Datasheet

The IRFP2907 is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IRFP2907	Power MOSFET, Transistor PD -93906D IRFP2907 AUTOMOTIVE MOSFET HEXFET® Power MOSFET Typical Applications l Integrated Starter Alternator l 42 Volts Automotive Electrical Systems D VDSS = 75V Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Swi	International Rectifier
2	IRFP2907B	HEXFET Power MOSFET Die in Wafer Form PD - 93777 IRFC2907B HEXFET® l Power MOSFET Die in Wafer Form D 100% Tested at Probe l Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack** l Ultra Low On-Resistance Electrical Characteristics * Parameter V(BR)DSS RDS(on)*** VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source B	International Rectifier
3	IRFP2907PBF	Power MOSFET, Transistor Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This Stripe Planar design of HE	International Rectifier
4	IRFP2907Z	AUTOMOTIVE MOSFET PD - 95873 AUTOMOTIVE MOSFET IRFP2907Z HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 75V RDS(on) = 4.5mΩ G S Description Specifically designed for	International Rectifier

Product Description and Specifications

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IRFP2907 mosfet

1. 209A, HEXFET MOSFET - IR

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Relevant Search Results

Part No	Description	Manufacturers	PDF
IRFP27N60K	Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A) PD - 94407 SMPS MOSFET Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv, dt Rugg	International Rectifier
IRFP254N	Power MOSFET, Transistor PD - 94213 IRFP254N HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS(on) = 125mΩ G S ID = 23A Description Fifth Generation H	IRF
IRFP254B	250V N-Channel MOSFET IRFP254B November 2001 IRFP254B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr	Fairchild
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