IRFP240 PDF Datasheet

The IRFP240 is 200V, 20A, N-Channel MOSFET (Transistor). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IRFP240	200V, 20A, N-Channel MOSFET (Transistor) These MOSFETs are designed for use in switch mode power supplies and general purpose applications.	Inchange Semiconductor
2		Power MOSFET, Transistor Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.	International Rectifier
3		20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation.	Intersil Corporation
4		Power MOSFET, Transistor IRFP240, SiHFP240 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 Single D FEATURES 200 0.18 Dynamic dV, dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Para	Vishay Siliconix

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IRFP240 MOSFET Transistor

1. N-Ch, MOSFET ( PDF )

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Relevant Search Results

Part No	Description	Manufacturers	PDF
IRFP27N60K	Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A) PD - 94407 SMPS MOSFET Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv, dt Rugg	International Rectifier
IRFP254N	Power MOSFET, Transistor PD - 94213 IRFP254N HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS(on) = 125mΩ G S ID = 23A Description Fifth Generation H	IRF
IRFP254B	250V N-Channel MOSFET IRFP254B November 2001 IRFP254B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr	Fairchild
IRFPS60N50C	HEXFET Power MOSFET	International Rectifier
IRFPS59N60C	HEXFET Power MOSFET	International Rectifier
IRFPS43N50K	HEXFET Power MOSFET	International Rectifier
IRFPS40N60K	Power MOSFET, Transistor	Vishay

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