IRFP150A PDF Datasheet

The IRFP150A is N-Channel MOSFET Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IRFP150A	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP150A FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mo	Inchange Semiconductor
2	IRFP150A	Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ.) Ο IRFP150A BVDSS = 100 V	Fairchild Semiconductor

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Relevant Search Results

Part No	Description	Manufacturers	PDF
IRFP140N	Power MOSFET, Transistor PD - 91343B IRFP140N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.052Ω ID = 33A Description Fifth Generation HEXFETs from International Rectifier utilize advan	International Rectifier
IRFP140A	Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.) Ο IRFP140A BVDSS = 100 V	Fairchild Semiconductor
IRFP1405	AUTOMOTIVE MOSFET PD - 95810 AUTOMOTIVE MOSFET IRFP1405 HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 5.3mΩ ID = 95A Description Specificall	International Rectifier
IRFPS60N50C	HEXFET Power MOSFET	International Rectifier
IRFPS59N60C	HEXFET Power MOSFET	International Rectifier
IRFPS43N50K	HEXFET Power MOSFET	International Rectifier
IRFPS40N60K	Power MOSFET, Transistor	Vishay

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