IRFN214B PDF Datasheet

The IRFN214B is 250V N-Channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IRFN214B	250V N-Channel MOSFET IRFN214B IRFN214B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio	Fairchild Semiconductor

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Part No	Description	Manufacturers	PDF
IRFN240	POWER MOSFET N-CHANNE Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1548 HEXFET® POWER MOSFET 200 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combine	International Rectifier
IRFN240SMD	N-CHANNEL POWER MOSFET IRFN240SMD MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 3 0 .7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS(	Seme LAB
IRFN250	POWER MOSFET N-CHANNE Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1549 HEXFET® POWER MOSFET 200 Volt, 0.100Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combin	International Rectifier
IRFNL210B	200V N-Channel MOSFET	Fairchild Semiconductor
IRFNJ9130SMD05	P-CHANNEL POWER MOSFET	Seme LAB
IRFNJ9130	P-CHANNEL POWER MOSFET	Seme LAB
IRFNG50	POWER MOSFET N-CHANNEL	International Rectifier

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