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IRFF210 PDF DatasheetThe IRFF210 is 2.2A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | IRFF210 | 2.2A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET IRFF210
Data Sheet March 1999 File Number 1887.3
2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mo
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 Intersil Corporation |
| 2 | TRANSISTORS PD-90424D
REPETITIVE AVALANCHE AND dv, dt RATED
HEXFET®TRANSISTORS THRU-HOLE-TO-205AF (TO-39)
Product Summary
Part Number BVDSS RDS(on)
IRFF210
200V 1.5Ω
ID 2.25A
IRFF210 JANTX2N6784 JANTXV2N6784
REF:MIL-PRF-19500, 556
200V, N-CHANNEL
The HEXFET®technology is the key to International
Rec
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 International Rectifier |
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