IRFD210 PDF Datasheet

The IRFD210 is 0.6A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IRFD210	0.6A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET IRFD210 Data Sheet July 1999 File Number 2316.3 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power	Intersil Corporation
2	IRFD210	Power MOSFET(Vdss=200V/ Rds(on)=1.5ohm/ Id=0.60A)	International Rectifier
3	IRFD210PBF	HEXFET Power MOSFET PD- 95924 IRFD210PbF Lead-Free www.irf.com 1 10, 27, 04 IRFD210PbF 2 www.irf.com IRFD210PbF www.irf.com 3 IRFD210PbF 4 www.irf.com IRFD210PbF www.irf.com 5 IRFD210PbF 6 www.irf.com IRFD210PbF Peak Diode Recovery dv, dt Test Circuit + Circuit Layout Considerations Lo	International Rectifier

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Part No	Description	Manufacturers	PDF
IRFD214	Power MOSFET(Vdss=250V/ Rds(on)=2.0ohm/ Id=0.45A) Previous Datasheet Index Next Data Sheet PD -9.1271 IRFD214 HEXFET® Power MOSFET Dynamic dv, dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier	International Rectifier
IRFD220	0.8A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET IRFD220 Data Sheet July 1999 File Number 2317.3 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mod	Intersil Corporation
IRFD224	Power MOSFET(Vdss=250V/ Rds(on)=1.1ohm/ Id=0.63A) Previous Datasheet Index Next Data Sheet PD -9.1272 IRFD224 HEXFET® Power MOSFET Dynamic dv, dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier	International Rectifier
IRFDC20	Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=0.32A)	International Rectifier
IRFD9220	Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-0.56A)	International Rectifier
IRFD9210PBF	HEXFET Power MOSFET	International Rectifier
IRFD9210	Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-0.40A)	International Rectifier

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