IRFB9N65A PDF Datasheet

The IRFB9N65A is Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=8.5A). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IRFB9N65A	Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=8.5A) PD - 91815C SMPS MOSFET IRFB9N65A HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv, dt Ruggedness l Fully Chara	International Rectifier
2	IRFB9N65APBF	HEXFET Power MOSFET PD - 95416 IRFB9N65APbF SMPS MOSFET Applications l l l l HEXFET® Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free VDSS 650V RDS(on) max 0.93Ω ID 8.5A Benefits l l l Low Gate Charge Qg results in Simple Drive Requirement Improve	International Rectifier

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Relevant Search Results

Part No	Description	Manufacturers	PDF
IRFB9N30A	Power MOSFET(Vdss=300V/ Rds(on)=0.45ohm/ Id=9.3A) PD- 91832 IRFB9N30A HEXFET® Power MOSFET l l l l l Dynamic dv, dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 300V G S RDS(on) = 0.45Ω ID = 9.3A Description Third Generation HEXFETs from International Rectifier provide the designer	International Rectifier
IRFB9N60	Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A) PD - 91811 IRFB9N60A HEXFET® Power MOSFET l l l l l Dynamic dv, dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 600V G S RDS(on) = 0.75Ω ID = 9.2A Description Third Generation HEXFETs from International Rectifier provide the designer	International Rectifier
IRFB9N60A	Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A) PD - 91811 IRFB9N60A HEXFET® Power MOSFET l l l l l Dynamic dv, dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 600V G S RDS(on) = 0.75Ω ID = 9.2A Description Third Generation HEXFETs from International Rectifier provide the designer	International Rectifier
IRFBL3703	SMPS MOSFET	International Rectifier
IRFBL12N50A	HEXFET Power MOSFET	International Rectifier
IRFBL10N60A	HEXFET Power MOSFET	International Rectifier
IRFBG30	Power MOSFET, Transistor	Vishay

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