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IRF8010 PDF DatasheetThe IRF8010 is HEXFET Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | IRF8010 | HEXFET Power MOSFET PD - 94497
SMPS MOSFET
Applications High frequency DC-DC converters UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Curren
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International Rectifier |
| 2 | IRF8010L | SMPS MOSFET www.t.in
PD - 94573
SMPS MOSFET
Applications l High frequency DC-DC converters l UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche
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International Rectifier |
| 3 | IRF8010LPBF | HEXFET Power MOSFET
PD - 95433
SMPS MOSFET
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free
IRF8010SPbF IRF8010LPbF
HEXFET® Power MOSFET
VDSS
100V
RDS(on) max
15mΩ
ID
80A
Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Includ
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International Rectifier |
| 4 | IRF8010PBF | HEXFET Power MOSFET
PD - 95505
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free
SMPS MOSFET
IRF8010PbF
HEXFET® Power MOSFET
VDSS
100V
RDS(on) max
15mΩ
ID
80A
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective
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International Rectifier |
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