IRF7338 PDF Datasheet

The IRF7338 is HEXFET Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IRF7338	HEXFET Power MOSFET PD - 94372C IRF7338 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 D1 D1 N-Ch VDSS 12V P-Ch -12V 3 6 D2 D2 4 5 P-CHANNEL MOSFET RDS(on) 0.034Ω 0.150Ω Top View Descriptio	International Rectifier
2	IRF7338PBF	HEXFET Power MOSFET PD - 95197 IRF7338PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 12V P-Ch -12V 6 5 P-CHANNEL MOSFET RDS(on) 0.034Ω 0.150Ω Top View	International Rectifier

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Relevant Search Results

Part No	Description	Manufacturers	PDF
IRF730	PowerMOS transistor Avalanche energy rated Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES Repetitive Avalanche Rated Fast switching High thermal cycling performance Low thermal resistance g IRF730 SYMBOL d QUICK REFERENCE DATA VDSS = 400 V ID = 7.2 A RDS(ON) ≤ 1 Ω s GENERAL DESC	NXP Semiconductors
IRF7301	Power MOSFET(Vdss=20V/ Rds(on)=0.050ohm) PD - 9.1238C IRF7301 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv, dt Rating Fast Switching S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 20V RDS(on) = 0.050Ω 3 6 4 5 T o p V iew D	International Rectifier
IRF7303	Power MOSFET(Vdss=30V/ Rds(on)=0.050ohm) PD - 9.1239D IRF7303 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv, dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 30V RDS(on) = 0.050Ω 3 6 4 5 Top V	International Rectifier
IRF7YSZ44VCM	Power MOSFET, Transistor	International Rectifier
IRF7Y1405CM	Power MOSFET, Transistor	International Rectifier
IRF7NJZ44V	HEXFET-R POWER MOSFET SURFACE MOUNT	International Rectifier
IRF7NA2907	HEXFET POWER MOSFET SURFACE MOUNT	International Rectifier

List of most widely used semiconductors

6N137 | LM393 | 2N3906 | 2N2222 | TIP120 |

1N5818 | LM324N | A1015 | SMAJ20CA

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