IRF644NS PDF Datasheet

The IRF644NS is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IRF644NS	Power MOSFET, Transistor l Advanced Process Technology l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB version is currently available in a Deslecardi-pfrteieonconfiguration) Fifth Generation HEXFE	International Rectifier
2	IRF644NS	Power MOSFET, Transistor IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 54 Qgs (nC) 9.2 Qgd (nC) 26 Configuration Single 0.240 I2PAK (TO-262) TO-220 D S D G D2PAK (TO-263) S D G G GD S S N-Cha	Vishay

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Part No	Description	Manufacturers	PDF
IRF640	N-channel TrenchMOS transistor Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S FEATURES ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 16 A g RDS(ON) ≤ 180 mΩ s GENERAL DESCRIPTION	NXP Semiconductors
IRF640B	200V N-Channel MOSFET IRF640B, IRFS640B November 2001 IRF640B, IRFS640B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-st	Fairchild Semiconductor
IRF640FP	N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET ® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220, TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0.18 Ω < 0.18 Ω ID 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV, dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIM	STMicroelectronics
IRF6N60	Power MOSFET, Transistor	Suntac Electronic
IRF6N40	Power MOSFET, Transistor	Suntac Electronic
IRF6898MTRPBF	Power MOSFET, Transistor	International Rectifier
IRF6898MPBF	Power MOSFET, Transistor	International Rectifier

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