IRF610 PDF Datasheet

The IRF610 is N-Channel Mosfet Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IRF610	N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF610 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-	Inchange Semiconductor
2		3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET IRF610 Data Sheet June 1999 File Number 1576.3 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode	Intersil Corporation
3		N-Channel Power MOSFETs/ 3.5A/ 150-200V	Fairchild Semiconductor
4		Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB	New Jersey Semiconductor

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Part No	Description	Manufacturers	PDF
IRF610B	200V N-Channel MOSFET IRF610B, IRFS610B IRF610B, IRFS610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,	Fairchild Semiconductor
IRF614B	250V N-Channel MOSFET IRF614B, IRFS614B November 2001 IRF614B, IRFS614B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-st	Fairchild Semiconductor
IRF6156	FlipFET Power MOSFET PD - 94592A IRF6156 Ultra Low RSS(on) per Footprint Area l Low Thermal Resistance l Bi-Directional N-Channel Switch l Super Low Profile (<.8mm) l Available Tested on Tape & Reel l ESD Protection Diode Description l FlipFET Power MOSFET VSS 20V : 60m:@VGS1,2 = 2.5V 40m @VGS1,2 = 4.5V RSS(on) ma	International Rectifier
IRF6N60	Power MOSFET, Transistor	Suntac Electronic
IRF6N40	Power MOSFET, Transistor	Suntac Electronic
IRF6898MTRPBF	Power MOSFET, Transistor	International Rectifier
IRF6898MPBF	Power MOSFET, Transistor	International Rectifier

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