IRF550 PDF Datasheet

The IRF550 is Advanced Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IRF550	Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ.) Ο IRF550A BVDSS = 100 V R	Fairchild Semiconductor
2	IRF550A	Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ.) Ο IRF550A BVDSS = 100 V R	Fairchild Semiconductor

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Relevant Search Results

Part No	Description	Manufacturers	PDF
IRF550A	Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ.) Ο IRF550A BVDSS = 100 V R	Fairchild Semiconductor
IRF5YZ48CM	POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.029ohm/ Id=18A*)	International Rectifier
IRF5Y9540CM	POWER MOSFET P-CHANNEL(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-18A)	International Rectifier
IRF5Y6215CM	POWER MOSFET P-CHANNEL(Vdss=-150V/ Rds(on)=0.29ohm/ Id=-11A)	International Rectifier
IRF5Y540CM	POWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.058ohm/ Id=18A*)	International Rectifier

List of most widely used semiconductors

6N137 | LM393 | 2N3906 | 2N2222 | TIP120 |

1N5818 | LM324N | A1015 | SMAJ20CA

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