IRF520CF PDF Datasheet

The IRF520CF is Trans MOSFET N-CH 100V 9.7A 3-Pin(3+Tab) TO-220AB. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IRF520CF	Trans MOSFET N-CH 100V 9.7A 3-Pin(3+Tab) TO-220AB	New Jersey Semiconductor

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Part No	Description	Manufacturers	PDF
IRF520	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI s s s s s s s V DSS 100 V 100 V R DS( on) < 0.27 Ω < 0.27 Ω ID 10 A 7A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH	STMicroelectronics
IRF520A	Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) Ο IRF520A BVDSS = 100 V R	Fairchild Semiconductor
IRF520L	Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=9.7A) PD -91340A IRF520NS, L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF520NS) Low-profile through-hole (IRF520NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.20Ω G S ID = 9.7A Description Fifth Generation HEXFET	International Rectifier
IRF5YZ48CM	POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.029ohm/ Id=18A*)	International Rectifier
IRF5Y9540CM	POWER MOSFET P-CHANNEL(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-18A)	International Rectifier
IRF5Y6215CM	POWER MOSFET P-CHANNEL(Vdss=-150V/ Rds(on)=0.29ohm/ Id=-11A)	International Rectifier
IRF5Y540CM	POWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.058ohm/ Id=18A*)	International Rectifier

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