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IRF510 PDF DatasheetThe IRF510 is Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=5.6A). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | IRF510 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF510
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
·DESCRITION ·Designed especially for high voltage,high speed applications,
such as off-
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Inchange Semiconductor |
| 2 | N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
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| 3 | 5.6A / 100V / N-Channel MOSFET Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature
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Intersil Corporation |
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| 4 | Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=5.6A) |
International Rectifier |
| Product Description and Specifications |
Displays the Product Image or Pinouts. ![]() 1. 100V, 5.6A, N-Ch, MOSFET, Transistor [ Learn More ] |
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