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IRF122 PDF DatasheetThe IRF122 is N-Channel Power MOSFETs/ 11 A/ 60-100 V. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | IRF122 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF122
DESCRIPTION ·Drain Current ID=7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.4Ω(Max) ·Nanosecond Switching Speeds
APPLICATIONS ·Switching power supp
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 Inchange Semiconductor |
| 2 | N-Channel Power MOSFETs/ 11 A/ 60-100 V |
 Fairchild Semiconductor |
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| 3 | N-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
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| 4 | 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs Semiconductor
IRF120, IRF121, IRF122, IRF123
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci ed
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 Intersil Corporation |
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