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IRF044 PDF DatasheetThe IRF044 is N-CHANNEL POWER MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | IRF044 | N-Channel MOSFET / Transistor 1. Drain Current ID=44A@ TC=25℃ 2 .Drain Source Voltage: VDSS= 60V(Min) 3. Static Drain-Source On-Resistance: RDS(on) = 0.028Ω(Max) 4. Simple Drive Requirements
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 Inchange Semiconductor |
| 2 | N-CHANNEL POWER MOSFET 1. HERMETICALLY SEALED TO 3 METAL PACKAGE 2. SIMPLE DRIVE REQUIREMENTS SCREENING OPTIONS AVAILABLE 3. TO 3 Metal Package 4. Pin 1 Gate Pin 2 Source Case Drain
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 Seme LAB |
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| 3 | 60V, N-Channel HEXFET / Transistor The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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 International Rectifier |
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| 4 | IRF044SMD | N-CHANNEL POWER MOSFET LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
IRF044SMD
N CHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 ) M a x .
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
1
3
0 .7 6 (0 .0 3 0 ) m in .
VDSS ID(con
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Seme LAB |
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