IPP114N12N3G PDF Datasheet

The IPP114N12N3G is Power-Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IPP114N12N3G	Power-Transistor OptiMOSTM3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID 175 °C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for t	Infineon

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Part No	Description	Manufacturers	PDF
IPP110N06LG	Power-Transistor IPB110N06L G IPP110N06L G OptiMOS® Power-Transistor Features For fast switching converters and sync. rectification N-channel enhancement - logic level 175 °C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version 60 11	Infineon Technologies
IPP111N15N3G	Power Transistor IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead	Infineon Technologies
IPP110N20N3G	Power Transistor IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target a	Infineon Technologies
IPP17N25S3-100	Power MOSFET, Transistor	Infineon
IPP16CNE8NG	Power-Transistor	Infineon Technologies
IPP16CN10NG	Power-Transistor	Infineon Technologies
IPP15N03L	OptiMOS Buck Converter	Infineon Technologies AG

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