IPP082N10N3G PDF Datasheet

The IPP082N10N3G is Power-Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IPP082N10N3G	Power-Transistor IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED	Infineon Technologies

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Part No	Description	Manufacturers	PDF
IPP08CNE8NG	Power-Transistor IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G OptiMOS®2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target app	Infineon Technologies
IPP08CN10NG	Power-Transistor IPB08CN10N G IPI08CN10N G IPP08CN10N G OptiMOS®2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target app	Infineon Technologies
IPP085N06LG	Power-Transistor IPB085N06L G IPP085N06L G OptiMOS® Power-Transistor Features For fast switching converters and sync. rectification N-channel enhancement - logic level 175 °C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version 60 8.	Infineon Technologies
IPP09N03LA	OptiMOS 2 Power-Transistor	Infineon Technologies AG
IPP096N03LG	Power-Transistor	Infineon
IPP091N06NG	Power-Transistor	Infineon Technologies
IPP08CNE8NG	Power-Transistor	Infineon Technologies

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