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HFS4N65 PDF Datasheet

The HFS4N65 is N-Channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 HFS4N65 N-Channel MOSFET

HFS4N65 April 2006 HFS4N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6* A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15
SemiHow
SemiHow
2 HFS4N65F N-Channel MOSFET

HFS4N65F July 2015 HFS4N65F 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ.) Extended Safe Operating Area Lower
SemiHow
SemiHow
3 HFS4N65FS N-Channel MOSFET

HFS4N65FS July 2015 HFS4N65FS 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ID = 4 A FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8
SemiHow
SemiHow




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Relevant Search Results

Part NoDescriptionManufacturersPDF
HFS4N60 600V, 4A, N-Channel MOSFET

Low RDS(ON) of 2.0Ω (typ.) / Low gate charge of 15nC (typ.) / Robust avalanche energy handling
SEMIHOW
SEMIHOW
datasheet HFS4N60 pdf
HFS4N50 N-Channel MOSFET

HFS4N50 July 2005 HFS4N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 2.0 Ω ID = 3.4 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC
SemiHow
SemiHow
datasheet HFS4N50 pdf
HFS4N90 N-Channel MOSFET

HFS4N90 March 2014 HFS4N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ID = 4.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.)
SemiHow
SemiHow
datasheet HFS4N90 pdf
HFS4N90 N-Channel MOSFETSemiHow
SemiHow
datasheet HFS4N90 pdf
HFS4N65FS N-Channel MOSFETSemiHow
SemiHow
datasheet HFS4N65FS pdf
HFS4N65F N-Channel MOSFETSemiHow
SemiHow
datasheet HFS4N65F pdf
HFS4N60FS 600V N-Channel MOSFETSemiHow
SemiHow
datasheet HFS4N60FS pdf


List of most widely used semiconductors


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