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FGL35N120FTD PDF DatasheetThe FGL35N120FTD is IGBT, Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | FGL35N120FTD | IGBT, Insulated Gate Bipolar Transistor FGL35N120FTD 1200 V, 35 A Field Stop Trench IGBT
FGL35N120FTD
1200 V, 35 A Field Stop Trench IGBT
November 2013
Features
Field Stop Trench Technology High Speed Switching Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35 A High Input Impedance
Applications
Solar Inverter, UPS, Welder, PFC
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Fairchild Semiconductor |
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