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FDPF20N50 PDF DatasheetThe FDPF20N50 is N-Channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | FDPF20N50 | N-Channel MOSFET FDP20N50 , FDPF20N50 , FDPF20N50T N-Channel UniFETTM MOSFET
November 2013
FDP20N50 , FDPF20N50 , FDPF20N50T
N-Channel UniFETTM MOSFET
500 V, 20 A, 230 mΩ Features
RDS(on) = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A Low Gate Charge (Typ. 45.6 nC) Low Crss (Typ. 27 pF) 100% Avalanche Tested
|
Fairchild Semiconductor |
| 2 | FDPF20N50FT | N-Channel MOSFET FDP20N50F, FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
March 2013
FDP20N50F , FDPF20N50FT
N-Channel UniFETTM FRFET® MOSFET
500 V, 20 A, 260 m
Features
RDS(on) = 210 m (Typ.) @ VGS = 10 V, ID = 10 A Low Gate Charge (Typ. 50 nC) Low Crss (Typ. 27 pF) 100% Avalanche Aested Improve dv, dt
|
Fairchild Semiconductor |
| 3 | FDPF20N50T | N-Channel MOSFET FDP20N50 , FDPF20N50 , FDPF20N50T N-Channel UniFETTM MOSFET
November 2013
FDP20N50 , FDPF20N50 , FDPF20N50T
N-Channel UniFETTM MOSFET
500 V, 20 A, 230 mΩ Features
RDS(on) = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A Low Gate Charge (Typ. 45.6 nC) Low Crss (Typ. 27 pF) 100% Avalanche Tested
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Fairchild Semiconductor |
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