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FDPF12N50 PDF DatasheetThe FDPF12N50 is N-Channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | FDPF12N50 | N-Channel MOSFET FDP12N50 , FDPF12N50 N-Channel MOSFET
June 2007
FDP12N50 , FDPF12N50
N-Channel MOSFET
500V, 11.5A, 0.65Ω Features
RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A Low gate charge ( Typ. 22nC) Low Crss ( Typ. 11pF) Fast switching 100% avalanche tested Improved dv, dt capability RoHS compliant
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Fairchild Semiconductor |
| 2 | FDPF12N50FT | N-Channel MOSFET FDP12N50F , FDPF12N50FT N-Channel MOSFET
December 2007
UniFETTM
FDP12N50F , FDPF12N50FT
N-Channel MOSFET
500V, 11.5A, 0.7Ω Features
RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A Low gate charge ( Typ. 21nC) Low Crss ( Typ. 11pF) Fast switching 100% avalanche tested Improve dv, dt capabil
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Fairchild Semiconductor |
| 3 | FDPF12N50NZ | N-Channel MOSFET FDP12N50NZ , FDPF12N50NZ N-Channel UniFETTM II MOSFET
March 2013
FDP12N50NZ , FDPF12N50NZ
N-Channel UniFETTM II MOSFET
500 V, 11.5 A, 520 m Features
RDS(on) = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A Low Gate Charge (Typ. 23 nC ) Low Crss (Typ. 14 pF ) 100% Avalanche Tested ESD Improved Capa
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Fairchild Semiconductor |
| 4 | FDPF12N50T | N-Channel MOSFET FDP12N50 , FDPF12N50T N-Channel UniFETTM MOSFET
FDP12N50 , FDPF12N50T
N-Channel UniFETTM MOSFET
500 V, 11.5 A, 650 mΩ
Features
RDS(on) = 550 mΩ (Typ.) @ VGS = 10 V, ID = 6 A Low Gate Charge (Typ. 22 nC) Low Crss (Typ. 11 pF) 100% Avalanche Tested RoHS Compliant
Applications
LCD, LED, PDP
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Fairchild Semiconductor |
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