FDMC8878 PDF Datasheet

The FDMC8878 is N-Channel Power Trench MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	FDMC8878	N-Channel Power Trench MOSFET FDMC8878 N-Channel Power Trench® MOSFET February 2007 FDMC8878 N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ Features General Description Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A Low Profile - 1mm max in Power 33 RoHS Compliant tm This	Fairchild Semiconductor

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Part No	Description	Manufacturers	PDF
FDMC8554	N-Channel Power Trench MOSFET FDMC8554 N-Channel PowerTrench® MOSFET February 2007 FDMC8554 N-Channel Power Trench® MOSFET 20V, 16.5A, 5mΩ Features General Description Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A Low Profile - 1mm max in a MicroFET 3.3x3.3 mm RoHS Compliant	Fairchild Semiconductor
FDMC8854	N-Channel Power Trench MOSFET FDMC8854 N-Channel PowerTrench® MOSFET February 2007 FDMC8854 N-Channel Power Trench® MOSFET 30V, 15A, 5.7mΩ Features General Description Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A Low Profile - 1mm max in Power 33 RoHS Compliant tm This N-	Fairchild Semiconductor
FDMC8200	N-Channel MOSFET FDMC8200 Dual N-Channel PowerTrench® MOSFET June 2009 FDMC8200 Dual N-Channel PowerTrench® MOSFET 30 V, 9.5 mΩ and 20 mΩ Features Q1: N-Channel Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel Max rDS(on) = 9.5 mΩ at VGS = 10 V,	Fairchild Semiconductor
FDMC89521L	MOSFET, Transistor	Fairchild Semiconductor
FDMC8884	N-Channel Power Trench MOSFET	Fairchild
FDMC8882	MOSFET, Transistor	Fairchild Semiconductor
FDMC8854	N-Channel Power Trench MOSFET	Fairchild Semiconductor

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