FDMC7692S PDF Datasheet

The FDMC7692S is MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	FDMC7692S	MOSFET, Transistor FDMC7692S N-Channel PowerTrench® SyncFETTM FDMC7692S N-Channel PowerTrench® SyncFETTM 30 V, 18 A, 9.3 mΩ Features General Description June 2014 Max rDS(on) = 9.3 mΩ at VGS = 10 V, ID = 12.5 A Max rDS(on) = 13.6 mΩ at VGS = 4.5 V, ID = 10.4 A High performance technology for extremely lo	Fairchild Semiconductor

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Part No	Description	Manufacturers	PDF
FDMC7664	N-Channel MOSFET FDMC7664 N-Channel PowerTrench® MOSFET July 2009 FDMC7664 30 V, 18.8 A, 4.2 m: Features N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-stat	Fairchild Semiconductor
FDMC7672	N-Channel Power Trench MOSFET FDMC7672 N-Channel Power Trench® MOSFET June 2014 FDMC7672 N-Channel Power Trench® MOSFET 30 V, 16.9 A, 5.7 mΩ Features General Description Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A High performance technology for extremely low rDS(	Fairchild Semiconductor
FDMC7680	N-Channel MOSFET FDMC7680 N-Channel Power Trench® MOSFET July 2009 FDMC7680 30 V, 14.8 A, 7.2 m: Features Max rDS(on) = 7.2 m: at VGS = 10 V, ID = 14.8 A Max rDS(on) = 9.5 m: at VGS = 4.5 V, ID = 12.4 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant N-Channe	Fairchild Semiconductor
FDMC89521L	MOSFET, Transistor	Fairchild Semiconductor
FDMC8884	N-Channel Power Trench MOSFET	Fairchild
FDMC8882	MOSFET, Transistor	Fairchild Semiconductor
FDMC8878	N-Channel Power Trench MOSFET	Fairchild Semiconductor

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