FDC6301 PDF Datasheet

The FDC6301 is Dual N-Channel / Digital FET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	FDC6301	Dual N-Channel / Digital FET July 1997 FDC6301N Dual N-Channel , Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state	Fairchild Semiconductor
2	FDC6301N	Dual N-Channel / Digital FET July 1997 FDC6301N Dual N-Channel , Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state	Fairchild Semiconductor

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Part No	Description	Manufacturers	PDF
FDC6301N	Dual N-Channel / Digital FET July 1997 FDC6301N Dual N-Channel , Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state	Fairchild Semiconductor
FDC6302P	Digital FET/ Dual P-Channel October 1997 FDC6302P Digital FET, Dual P-Channel General Description These Dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state	Fairchild Semiconductor
FDC6303	Digital FET/ Dual N-Channel August 1997 FDC6303N Digital FET, Dual N-Channel General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state	Fairchild Semiconductor
FDC699P	P-Channel 2.5V PowerTrench MOSFET	Fairchild Semiconductor
FDC697P	P-Channel 1.8V PowerTrench MOSFET	Fairchild Semiconductor
FDC6901L	Integrated Load Switch	Fairchild Semiconductor
FDC658P	Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET	Fairchild Semiconductor

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