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FDB2532 PDF Datasheet

The FDB2532 is N-Channel PowerTrench MOSFET 150V/ 79A/ 16m. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 FDB2532 N-Channel PowerTrench MOSFET

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB2532(FDB2532) Features rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A Qg(tot) = 82nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.
Kexin
Kexin
2 N-Channel PowerTrench MOSFET 150V/ 79A/ 16m

FDB2532 , FDP2532 , FDI2532 August 2002 FDB2532 , FDP2532 , FDI2532 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ Features r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A Qg(tot) = 82nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pul
Fairchild Semiconductor
Fairchild Semiconductor
3 FDB2532_F085 N-Channel PowerTrench MOSFET

FDB2532_F085 N-Channel PowerTrench® MOSFET FDB2532_F085 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ Features rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A Qg(tot) = 82nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to A
Fairchild Semiconductor
Fairchild Semiconductor




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Relevant Search Results

Part NoDescriptionManufacturersPDF
FDB2552 N-Channel PowerTrench MOSFET 150V/ 37A/ 36m

FDB2552 , FDP2552 October 2002 FDB2552 , FDP2552 N-Channel PowerTrench® MOSFET 150V, 37A, 36mΩ Features r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 16A Qg(tot) = 39nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDB2552 pdf
FDB2570 150V N-Channel PowerTrench MOSFET

FDP2570, FDB2570 August 2001 FDP2570, FDB2570 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC, DC converter application. Any application requiring a 150V MOSFETs with low on-resistance a
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDB2570 pdf
FDB2572 N-Channel PowerTrench MOSFET 150V/ 29A/ 54m

FDB2572 , FDP2572 September 2002 FDB2572 , FDP2572 N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ Features r DS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AE
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDB2572 pdf
FDB28N30 MOSFET, TransistorFairchild Semiconductor
Fairchild Semiconductor
datasheet FDB28N30 pdf
FDB2710 N-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor
datasheet FDB2710 pdf
FDB2670 N-Channel PowerTrench MOSFETKexin
Kexin
datasheet FDB2670 pdf
FDB2614 N-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor
datasheet FDB2614 pdf


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