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CS730F PDF Datasheet

The CS730F is N-Channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 CS730F N-Channel MOSFET

STB141NF55 - STB141NF55-1 STP141NF55 N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET Features Type STB141NF55 STB141NF55-1 STP141NF55 VDSS 55V 55V 55V RDS(on) <0.008Ω <0.008Ω <0.008Ω ID (1) 80A 80A 80A 3 1 2 1. Current limited by package 3 1 3 12 Descri
LZG
LZG
2 CS730FA9H Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS730F A9H ○R General Description: CS730F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be
Huajing Microelectronics
Huajing Microelectronics
3 CS730FA9RD Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS730F A9RD ○R General Description: CS730F A9RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance VDSS ID PD(TC=25℃) RDS(ON)Typ 400 6 30 0.75 and enhan
Huajing Microelectronics
Huajing Microelectronics




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Relevant Search Results

Part NoDescriptionManufacturersPDF
CS730FA9H Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS730F A9H ○R General Description: CS730F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be
Huajing Microelectronics
Huajing Microelectronics
datasheet CS730FA9H pdf
CS730A8H Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS730 A8H ○R General Description: CS730 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be u
Huajing Microelectronics
Huajing Microelectronics
datasheet CS730A8H pdf
CS730FA9RD Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS730F A9RD ○R General Description: CS730F A9RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance VDSS ID PD(TC=25℃) RDS(ON)Typ 400 6 30 0.75 and enhan
Huajing Microelectronics
Huajing Microelectronics
datasheet CS730FA9RD pdf
CS730FA9RD Silicon N-Channel Power MOSFETHuajing Microelectronics
Huajing Microelectronics
datasheet CS730FA9RD pdf
CS730FA9H Silicon N-Channel Power MOSFETHuajing Microelectronics
Huajing Microelectronics
datasheet CS730FA9H pdf
CS730A8RD Silicon N-Channel Power MOSFETHuajing Microelectronics
Huajing Microelectronics
datasheet CS730A8RD pdf
CS730A8H Silicon N-Channel Power MOSFETHuajing Microelectronics
Huajing Microelectronics
datasheet CS730A8H pdf


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