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CS4N60 PDF DatasheetThe CS4N60 is VDMOS. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | CS4N60 | VDMOS
晶分立器件
CS4N60(F)
CS4N60(F)型 VDMOS 晶 管
1. 述 特点
CS4N60(F)是 N 道 600V 系列 VDMOS 晶 管，主要用于 源适配器、充 器等各 功率 路。 具有如下特点： ● 速度快 ● 通 阻小 ● 可 使用 ● 封 形式： 品名 CS4N60 CS4N60F 封 形
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 EDN |
| 2 | CS4N60A3HD | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS4N60 A3HD
○R
General Description：
CS4N60 A3HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can
|
 Huajing Microelectronics |
| 3 | CS4N60A3R | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS4N60 A3R
○R
General Description：
CS4N60 A3R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be
|
Huajing Microelectronics |
| 4 | CS4N60A3TDY | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS4N60 A3TDY
○R
General Description：
CS4N60 A3TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be
|
Huajing Microelectronics |
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