CS2N70A3R PDF Datasheet

The CS2N70A3R is Silicon N-Channel Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	CS2N70A3R	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS2N70 A3R ○R General Description： VDSS 700 V CS2N70 A3R, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.7 Ω performa	Huajing Microelectronics
2	CS2N70A3R1-G	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS2N70 A3R1-G ○R General Description： VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.7 Ω pe	Huajing Microelectronics

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Relevant Search Results

Part No	Description	Manufacturers	PDF
CS2N70A3R1-G	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS2N70 A3R1-G ○R General Description： VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.7 Ω pe	Huajing Microelectronics
CS2N70A6	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS2N70 A6 ○R General Description： VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.7 Ω performanc	Huajing Microelectronics
CS2N70FA9	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS2N70F A9 ○R General Description： VDSS 700 V CS2N70F A9, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 27 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.7 Ω perf	Huajing Microelectronics
CS2N80A3HY	Silicon N-Channel Power MOSFET	Huajing Microelectronics
CS2N70FA9	Silicon N-Channel Power MOSFET	Huajing Microelectronics
CS2N70A6	Silicon N-Channel Power MOSFET	Huajing Microelectronics
CS2N70A4	Silicon N-Channel Power MOSFET	Huajing Microelectronics

List of most widely used semiconductors

6N137 | LM393 | 2N3906 | 2N2222 | TIP120 |

1N5818 | LM324N | A1015 | SMAJ20CA

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