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C5906 PDF DatasheetThe C5906 is Silicon NPN Epitaxial Type Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | C5906 | Silicon NPN Epitaxial Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5906
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SC5906
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) High-speed switching: t
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Toshiba |
| 2 | Silicon NPN transistor Silicon NPN transistor epitaxial type C5906
C5906
[ Applications ] High voltage, High current
[ Feature ] High voltage VCEO= 170V High current gain charactristic Low collector-emitter saturation voltage VCE(sat)= 0.45V(Max.) at IC, IB= 2A, 200mA Fast-switching speed
[ Absolute maximum ratings (T
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PHENITEC SEMICONDUCTOR |
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